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17 February 2009 Free carrier lifetime modification in silicon
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Abstract
We investigate the effects of silicon ion irradiation on free carrier lifetime and propagation loss in silicon rib waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers, an undesired effect of the Raman process in crystalline silicon. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted silicon ions can be kept low if irradiation energy and dose are correctly chosen. Simulations of Raman amplification in silicon rib waveguides suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to sweep out the photo-generated free carriers.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed "Free carrier lifetime modification in silicon", Proc. SPIE 7220, Silicon Photonics IV, 722006 (17 February 2009); https://doi.org/10.1117/12.810907
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