High speed analog-to-digital conversion with silicon photonics

C. W. Holzwarth; R. Amatya; M. Araghchini; J. Birge; H. Byun; J. Chen; M. Dahlem; N. A. DiLello; F. Gan; J. L. Hoyt; E. P. Ippen; F. X. Kärtner; A. Khilo; J. Kim; M. Kim; A. Motamedi; J. S. Orcutt; M. Park; M. Perrott; M. A. Popovic; R. J. Ram; H. I. Smith; G. R. Zhou; S. J. Spector; T. M. Lyszczarz; M. W. Geis; D. M. Lennon; J. U. Yoon; M. E. Grein; R. T. Schulein; S. Frolov; A. Hanjani; J. Shmulovich

doi:10.1117/12.808952

17 February 2009 High speed analog-to-digital conversion with silicon photonics

C. W. Holzwarth, R. Amatya, M. Araghchini, J. Birge, H. Byun, J. Chen, M. Dahlem, N. A. DiLello, F. Gan, J. L. Hoyt, E. P. Ippen, F. X. Kärtner, A. Khilo, J. Kim, M. Kim, A. Motamedi, J. S. Orcutt, M. Park, M. Perrott, M. A. Popovic, R. J. Ram, H. I. Smith, G. R. Zhou, S. J. Spector, T. M. Lyszczarz, M. W. Geis, D. M. Lennon, J. U. Yoon, M. E. Grein, R. T. Schulein, S. Frolov, A. Hanjani, J. Shmulovich

Author Affiliations +

Proceedings Volume 7220, Silicon Photonics IV; 72200B (2009) https://doi.org/10.1117/12.808952
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a V_πL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.

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C. W. Holzwarth, R. Amatya, M. Araghchini, J. Birge, H. Byun, J. Chen, M. Dahlem, N. A. DiLello, F. Gan, J. L. Hoyt, E. P. Ippen, F. X. Kärtner, A. Khilo, J. Kim, M. Kim, A. Motamedi, J. S. Orcutt, M. Park, M. Perrott, M. A. Popovic, R. J. Ram, H. I. Smith, G. R. Zhou, S. J. Spector, T. M. Lyszczarz, M. W. Geis, D. M. Lennon, J. U. Yoon, M. E. Grein, R. T. Schulein, S. Frolov, A. Hanjani, and J. Shmulovich "High speed analog-to-digital conversion with silicon photonics", Proc. SPIE 7220, Silicon Photonics IV, 72200B (17 February 2009); https://doi.org/10.1117/12.808952

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