Translator Disclaimer
Paper
26 January 2009 A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers
Author Affiliations +
Abstract
A novel active region concept for GaSb-based optically pumped mid-infrared vertical external cavity surface emitting lasers (VECSELs, also referred to as optically pumped semiconductor disk lasers - OPSDLs) is presented. The concept is based on GaxIn1-xAsySb1-y type-I quantum wells (QWs) embedded between AlAs0.08Sb0.92 barrier layers designed for optical in-well pumping where the pump absorption at pump wavelengths between 1 μm and 2 μm takes place exclusively in the active QWs. This concept provides several advantages such as a high modal gain, the suppression of thermal leakage currents, and an improved thermal conductivity of the active region compared to a conventional GaInAsSb/AlGaAsSb active region design. Using the novel design approach an in-well pumped VECSEL emitting at 2.24 μm has been realized, yielding at a heat sink temperature of 20°C in continuous-wave operation a power slope efficiency of more than 32% and an absorption of the 1.96 μm pump light of more than 50% without pump recycling, These data constitute a significant improvement in device performance compared to previously reported data on in-well pumped GaSb-based VECSELs.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Wagner, Benno Rösener, Nicola Schulz, Marcel Rattunde, Rüdiger Moser, Christian Manz, and Klaus Köhler "A novel active region concept for highly efficient GaSb-based optically in-well pumped semiconductor disk lasers", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220E (26 January 2009); https://doi.org/10.1117/12.807922
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top