Potential of semiconductor nanowires for single photon sources

Jean-Christophe Harmand; Linsheng Liu; Gilles Patriarche; Maria Tchernycheva; Nikolai Akopian; Umberto Perinetti; Valery Zwiller

doi:10.1117/12.810929

26 January 2009 Potential of semiconductor nanowires for single photon sources

Jean-Christophe Harmand, Linsheng Liu, Gilles Patriarche, Maria Tchernycheva, Nikolai Akopian, Umberto Perinetti, Valery Zwiller

Author Affiliations +

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 722219 (2009) https://doi.org/10.1117/12.810929
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The catalyst-assisted growth of semiconductor nanowires heterostructures offers a very flexible way to design and fabricate single photon emitters. The nanowires can be positioned by organizing the catalyst prior to growth. Single quantum dots can be formed in the core of single nanowires which can then be easily isolated and addressed to generate single photons. Diameter and height of the dots can be controlled and their emission wavelength can be tuned at the optical telecommunication wavelengths by the material composition. The final morphology of a wire can be shaped by the radial/axial growth ratio, offering the possibility to form single mode optical waveguides with a tapered end for efficient photon collection.

Citation Download Citation

Jean-Christophe Harmand, Linsheng Liu, Gilles Patriarche, Maria Tchernycheva, Nikolai Akopian, Umberto Perinetti, and Valery Zwiller "Potential of semiconductor nanowires for single photon sources", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 722219 (26 January 2009); https://doi.org/10.1117/12.810929

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