Single photon sources using InAs/InP quantum dots

R. Hostein; N. Gogneau; A. Michon; L. Le Gratiet; E. Cambril; G. Beaudoin; G. Patriarche; I. Robert-Phillip; J. Y. Marzin; A. Beveratos; I. Sagnes

doi:10.1117/12.814487

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26 January 2009 Single photon sources using InAs/InP quantum dots

R. Hostein, N. Gogneau, A. Michon, L. Le Gratiet, E. Cambril, G. Beaudoin, G. Patriarche, I. Robert-Phillip, J. Y. Marzin, A. Beveratos, I. Sagnes

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Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72221I (2009) https://doi.org/10.1117/12.814487
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Single photon sources are of extreme interest for future quantum communications networks. Several realizations of such sources where proposed but none of them corresponds to the needs of a quantum network, in terms of emission wavelength, repetition rate or quantum state purity. Using self organized InAs/InP quantum dots, it is possible to tune the emission wavelength up to 1.55 μm. Lifetime measurements confirm the high optical quality of these dots opening the possibility to engineer sources operate above 77K. With this material combination it is also possible to localized the growth of a single quantum dot, that can be to deterministically coupled to a photonic crystal cavity.

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R. Hostein, N. Gogneau, A. Michon, L. Le Gratiet, E. Cambril, G. Beaudoin, G. Patriarche, I. Robert-Phillip, J. Y. Marzin, A. Beveratos, and I. Sagnes "Single photon sources using InAs/InP quantum dots", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72221I (26 January 2009); https://doi.org/10.1117/12.814487

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