Electrical and optical characterization of individual GaSb nanowires

Wei Xu; Alan Chin; Laura Ye; Cun-Zheng Ning; Hongbin Yu

doi:10.1117/12.816931

17 February 2009 Electrical and optical characterization of individual GaSb nanowires

Wei Xu, Alan Chin, Laura Ye, Cun-Zheng Ning, Hongbin Yu

Proceedings Volume 7224, Quantum Dots, Particles, and Nanoclusters VI; 72240G (2009) https://doi.org/10.1117/12.816931
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Single GaSb Nanowire Field Effect Transistors (NWFETs) were fabricated and their electrical transport measurements were conducted at the temperatures ranging from 298 K to 503 K. The current on/off ratios as large as 3 orders of magnitude were observed. The Raman spectra and EDAX were performed on single wires to verify the GaSb property before and after the transport study. The temperature dependent current-voltage characteristic shows asymmetric current through the device due to asymmetric back-to-back Schottky contacts at the two ends of the wire. Arrhenius plots revealed effective Schottky barrier heights around Ø_Beff =0.53eV. Measurement conducted on back-gated nanowire transistors shows the polarity of nanowire to be n-type.

Citation Download Citation

Wei Xu, Alan Chin, Laura Ye, Cun-Zheng Ning, and Hongbin Yu "Electrical and optical characterization of individual GaSb nanowires", Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 72240G (17 February 2009); https://doi.org/10.1117/12.816931

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