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6 February 2009 Highly reliable high speed 1.1μm-InGaAs/GaAsP-VCSELs
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In this paper, we describe high temperature operation of high speed 1.1μm-range oxide-confined vertical-cavity surfaceemitting lasers (VCSELs) for optical interconnection applications. For achieving high speed of over 25 Gbit/s under a high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100°C. We also examined reliability of the VCSELs via accelerated life tests. The result showed extremely long MTTF lifetime of about 10 thousand hours under an ambient temperature of 150°C and a bias current of about 19 kA/cm2, a reliability that either equals or surpasses that of conventional 850-nm VCSELs with 10 Gbit/s. Moreover, we revealed a typical failure mode of the device; the result of analysis indicated that the failure was caused by <110> dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji "Highly reliable high speed 1.1μm-InGaAs/GaAsP-VCSELs", Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 722902 (6 February 2009);

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