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3 February 2009 High-brightness tapered lasers with an Al-free active region at 1060 nm
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High-brightness diode lasers at 1060 nm are useful in display applications (to provide green light by frequency doubling) and in free-space optical communications. On Al-free active region laser structures, we have obtained low optical losses of 0.9 cm-1, a high internal quantum efficiency of 98% and a low transparency current density of 64 A/cm2. On uncoated broad-area lasers (2 mm x 100 μm) at 20°C CW, we have obtained a high maximum wall-plug efficiency of 66%, and an optical power higher than 3W per facet. Based on these good results, we have realized 3.7 mm long gain-guided tapered lasers, delivering a high power of 3W at 10°C CW, together with a low M2 of 3 at 1/e2 and a high maximum wall-plug efficiency of 57%. We have also realized separate electrode lasers, in which the ridge and tapered sections are biased separately. In this configuration, the current through the ridge section is only a few tens mA while the current on the tapered section is several Amps. This allows to control a large output power with only a small change of the ridge current. By moving the ridge current from 0 to 50 mA, keeping a constant 4A current through the tapered section, we have obtained a large change of the output power from 0.09 W to 2.6 W, which corresponds to a high modulation efficiency of 50 W/A under static operation. In dynamic regime, the separate electrode laser can be operated at 700 Mbps, showing a high modulation efficiency of 19 W/A, optical modulation amplitude of 1.6 W and extinction ratio of 19dB [1]. These modulation efficiencies are, to our knowledge, record values.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Ruiz, H. Odriozola, C. H. Kwok, N. Michel, M. Calligaro, M. Lecomte, O. Parillaud, M. Krakowski, J. M. G. Tijero, I. Esquivias, R. V. Penty, and I. H. White "High-brightness tapered lasers with an Al-free active region at 1060 nm", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72301D (3 February 2009);

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