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3 February 2009 Native-oxide-confined mid-IR quantum cascade lasers via non-selective oxygen-enhanced wet oxidation
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Abstract
In this work, a novel self-aligned process utilizing non-selective, O2-enhanced wet thermal oxidation is presented for fabricating InP-based, ridge waveguide mid-infrared (λ=5.4 μm) quantum cascade lasers (QCLs) with a straincompensated, 30-stage (1.53 μm thick) InGaAs/AlInAs active region, grown via metal organic chemical vapor deposition. This process, previously used in GaAs-based diode lasers containing low-Al content AlGaAs or even Alfree III-As alloys, forms a highly-insulating native oxide layer while simultaneously smoothing and passivating the etchexposed active region, resulting in low-loss, strongly-confining waveguides. Here we report the first application of this process for directly oxidizing the deeply-etched QCL InGaAs/AlInAs active region ridge waveguide sidewalls and field (outside the ridge), eliminating the need for a deposited dielectric for electrical isolation, thus allowing self-aligned device fabrication. An 8 hour, 500 °C wet oxidation with 7000 ppm added O2 (relative to N2 carrier gas) yields a uniform oxide of ~350 nm in the field outside the ridge to ~500 nm on the ridge sidewall. Laser devices tested under room temperature, pulsed excitation exhibit a threshold current density of Jth~3.2 kA/cm2 for a 19.5 μm wide x 3 mm long stripe width.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher S. Seibert, Mithin D'Souza, Jae C. Shin, Luke J. Mawst, Dan Botez, and Douglas C. Hall "Native-oxide-confined mid-IR quantum cascade lasers via non-selective oxygen-enhanced wet oxidation", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72301O (3 February 2009); https://doi.org/10.1117/12.809788
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