Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao; Guangyu Liu; Xiaohang Li; Ronald A. Arif; G. S. Huang; Yik-Khoon Ee; Nelson Tansu

doi:10.1117/12.808542

3 February 2009 Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li, Ronald A. Arif, G. S. Huang, Yik-Khoon Ee, Nelson Tansu

Author Affiliations +

Proceedings Volume 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII; 72310E (2009) https://doi.org/10.1117/12.808542
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Staggered InGaN quantum wells (QWs) are analyzed as improved active media based on a 6-band k•p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. The growths of staggered InGaN QW emitting at green regime were conducted by employing graded temperature profile. The electroluminescence measurement shows a significant enhancement of the output power of the staggered InGaN QW LED as compared to that of the conventional InGaN QW LED.

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Hongping Zhao, Guangyu Liu, Xiaohang Li, Ronald A. Arif, G. S. Huang, Yik-Khoon Ee, and Nelson Tansu "Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile", Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 72310E (3 February 2009); https://doi.org/10.1117/12.808542

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