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30 December 2008 Extension of high-illumination level dynamic range for CMOS active pixel sensors
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Abstract
In this paper, we present a wide dynamic range active pixel sensor (APS) using an external charge pump circuit. The proposed pixel exhibits improved dynamic range through the compensated threshold voltage of a reset MOSFET. We confirmed that the light level which is the saturated output voltage in the proposed APS is about 170,000 lux, which is 36% higher than that of a conventional APS. The proposed APS is fabricated by using 2-poly 4-metal 0.35 &mgr; standard CMOS process. The unit pixel consists of an n+ diffusion / p-substrate photodiode, three NMOSFETs and the charge pump circuit which consists of two NMOSFETs and two capacitors.
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Min-Woong Seo, Sang-Ho Seo, and Jang-Kyoo Shin "Extension of high-illumination level dynamic range for CMOS active pixel sensors", Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72681T (30 December 2008); https://doi.org/10.1117/12.816721
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