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30 December 2008 Wet anisotropic etching by TMAH with NCW-1002 surfactant on crystalline silicon surface
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Paper reports the use of a new surfactant NCW-1002 as an addictive in TMAH wet anisotropic etching to improve the etching characteristic on three silicon principle planes (i.e. (100), (110), (111) planes). Concentrations of TMAH from 2.5% to 10% with addition of various concentration of NCW-1002 are studied to find an optimal combination for a improved smoothness and etch selectivity between (100) and (110) planes, which is necessary for the formation of 45°mirror plane (110) in (100) silicon surface. Etch rate and roughness of silicon planes were measured by Dektak II and AFM respectively. Besides, this paper will explain the formation of 45°slope. By improving the selectivity or extending the etching depth, we are able to enlarge the 45°portion on the mirror surface.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Wei Xu, Aron Michael, and Chee Yee Kwok "Wet anisotropic etching by TMAH with NCW-1002 surfactant on crystalline silicon surface", Proc. SPIE 7269, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV, 72690U (30 December 2008);


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