Transparency conversion mechanism and laser induced fast response of bimetallic Bi/In thin film

Sihai Cao; Chuanfei Guo; Yongsheng Wang; Junjie Miao; Zhuwei Zhang; Qian Liu

doi:10.1117/12.810615

30 December 2008 Transparency conversion mechanism and laser induced fast response of bimetallic Bi/In thin film

Sihai Cao, Chuanfei Guo, Yongsheng Wang, Junjie Miao, Zhuwei Zhang, Qian Liu

Proceedings Volume 7269, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV; 726910 (2008) https://doi.org/10.1117/12.810615
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2008, Melbourne, Australia

Abstract

Transparency conversion mechanism and laser induced fast response velocity of bimetallic Bi/In thin film is studied. Heat-treatment and laser exposure with different pulse width induced transparency is investigated by using ultraviolet-visible (UV-VIS) spectrometer, X-ray diffraction (XRD), Auger Electron Scan (AES), microscope and field emission scanning electron microscopy (FESEM). Research results show that oxidation is regarded as the reason for heat treated and long-pulsed laser exposure induced transparency conversion. Laser ablation is demonstrated to be the main reason for short-pulsed (~7ns) laser induced transparency conversion. For Bi/In thin film covered with a protection layer of (ZnS)_0.85(SiO₂)_0.15 thin film, it exhibit fast response as fast as less than 100ns. The conclusions contribute to understanding and development of materials for thermal resist, photomask, optical storage medium and transparent conductive oxide with better performance.

Citation Download Citation

Sihai Cao, Chuanfei Guo, Yongsheng Wang, Junjie Miao, Zhuwei Zhang, and Qian Liu "Transparency conversion mechanism and laser induced fast response of bimetallic Bi/In thin film", Proc. SPIE 7269, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV, 726910 (30 December 2008); https://doi.org/10.1117/12.810615

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