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17 March 2009 The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond
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Abstract
Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node. In this presentation, sub 22 nm half pitch imaging results of EUV resists are reported. We also present contact hole printing at the 30-nm level. Although resist development has progressed relatively well in the areas of resolution and sensitivity, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of system-level contributors to the LER observed from the SEMATECH Berkeley microfield tool.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick P. Naulleau, Christopher N. Anderson, Lorie-Mae Baclea-an, Paul Denham, Simi George, Kenneth A. Goldberg, Michael Goldstein, Brian Hoef, Russ Hudyma, Gideon Jones, Chawon Koh, Bruno La Fontaine, Brittany McClinton, Ryan H. Miyakawa, Warren Montgomery, John Roller, Thomas Wallow, and Stefan Wurm "The SEMATECH Berkeley microfield exposure tool: learning at the 22-nm node and beyond", Proc. SPIE 7271, Alternative Lithographic Technologies, 72710W (17 March 2009); https://doi.org/10.1117/12.814232
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