The application of EUV lithography for 40nm node DRAM device and beyond

Joo-on Park; Chawon Koh; Doohoon Goo; InSung Kim; Changmin Park; Jeonghoon Lee; JinHong Park; JeongHo Yeo; Seong-Woon Choi; Chan-hoon Park

doi:10.1117/12.814001

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17 March 2009 The application of EUV lithography for 40nm node DRAM device and beyond

Joo-on Park, Chawon Koh, Doohoon Goo, InSung Kim, Changmin Park, Jeonghoon Lee, JinHong Park, JeongHo Yeo, Seong-Woon Choi, Chan-hoon Park

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Proceedings Volume 7271, Alternative Lithographic Technologies; 727114 (2009) https://doi.org/10.1117/12.814001
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) is one of the leading candidates for next-generation lithography technology for the 32 nm half-pitch node and beyond. We have evaluated the Alpha Demo Tool(ADT) characterizing for mixed-andmatched overlay(MMO), flare noise, and resolution limit. For process integration, one of the important things in EUVL is overlay capability. We performed an overlay matching test of a 1.35NA and 193 immersion tool using a low thermal expansion material(LTEM) mask. We also investigated the flare level of the EUV ADT for device applications. The current EUV tool has a higher flare level than ArF lithography tools. We applied a contact layer for 40nm node device integration to reduce the variation in critical dimension(CD) from the flare noise.

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Joo-on Park, Chawon Koh, Doohoon Goo, InSung Kim, Changmin Park, Jeonghoon Lee, JinHong Park, JeongHo Yeo, Seong-Woon Choi, and Chan-hoon Park "The application of EUV lithography for 40nm node DRAM device and beyond", Proc. SPIE 7271, Alternative Lithographic Technologies, 727114 (17 March 2009); https://doi.org/10.1117/12.814001

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