High-resolution defect inspection of step-and-flash imprint lithography for 32-nm half-pitch patterning

Kosta Selinidis; Ecron Thompson; Ian McMackin; S.V. Sreenivasan; Douglas J. Resnick

doi:10.1117/12.815014

18 March 2009 High-resolution defect inspection of step-and-flash imprint lithography for 32-nm half-pitch patterning

Kosta Selinidis, Ecron Thompson, Ian McMackin, S.V. Sreenivasan, Douglas J. Resnick

Proceedings Volume 7271, Alternative Lithographic Technologies; 72711W (2009) https://doi.org/10.1117/12.815014
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Step and Flash Imprint involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned solid on the substrate. Compatibility with existing CMOS processes requires a mask infrastructure in which resolution, inspection and repair are all addressed. The purpose of this paper is to understand the limitations of inspection at half pitches of 32 nm and below. A 32 nm programmed defect mask was fabricated. Patterns included in the mask consisted of an SRAM Metal 1 cell, dense lines, and dense arrays of pillars. Programmed defect sizes started at 4 nm and increased to 48 nm in increments of 4 nm. Defects in both the mask and imprinted wafers were characterized scanning electron microscopy and the measured defect areas were calculated. These defects were then inspected using KLA-T eS35 and NGR2100 electron beam wafer inspection systems. Defect sizes as small as 8 nm were detected, and detection limits were found to be a function of defect type.

Citation Download Citation

Kosta Selinidis, Ecron Thompson, Ian McMackin, S.V. Sreenivasan, and Douglas J. Resnick "High-resolution defect inspection of step-and-flash imprint lithography for 32-nm half-pitch patterning", Proc. SPIE 7271, Alternative Lithographic Technologies, 72711W (18 March 2009); https://doi.org/10.1117/12.815014

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available