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18 March 2009 Mask defect verification using actinic inspection and defect mitigation technology
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The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. The successful production of defect-free masks will depend on the timely development of defect inspection tools, including both mask blank inspection tools and absorber pattern inspection tools to meet the 22 nm half-pitch node. EUV mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360 is operated at SEMATECH's Mask blank Development Center (MBDC) in Albany, with sensitivity to multilayer defects down to 40~45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for the next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. This paper will also discuss the kind of infrastructure that will be required in the development and mass production stages.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sungmin Huh, Patrick Kearney, Stefan Wurm, Frank Goodwin, Kenneth Goldberg, Iacopo Mochi, and Eric M. Gullikson "Mask defect verification using actinic inspection and defect mitigation technology", Proc. SPIE 7271, Alternative Lithographic Technologies, 72713J (18 March 2009);

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