Assessment of full-chip level EUV optical correction for sub-40nm memory device

Jeonghoon Lee; Insung Kim; Doohoon Goo; Joo-on Park; Changmin Park; Jinhong Park; Jeongho Yeo; Seongwoon Choi; Woosung Han

doi:10.1117/12.813996

18 March 2009 Assessment of full-chip level EUV optical correction for sub-40nm memory device

Jeonghoon Lee, Insung Kim, Doohoon Goo, Joo-on Park, Changmin Park, Jinhong Park, Jeongho Yeo, Seongwoon Choi, Woosung Han

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 727142 (2009) https://doi.org/10.1117/12.813996
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The two key factors in EUV lithography imaging will be flare and shadow effect among other issues. The flare which is similar to the long range density loading effect and also known to be of high level will generate CD variation throughout the exposure field while the EUV specific shadow effect differentiates H-V CDs along the slit. The long range character of flare in EUV full field scanner can even affect CDs in the neighboring fields. It seems to be apparent that the major imaging challenges for EUV lithography to be successfully adopted and applied to device manufacturing will be determined by how smartly and effectively CD variations induced both by flare and shadow effect in the full chip level are compensated. We investigated and assessed the previously proposed full chip level compensation strategies of the flare and shadow effect in EUVL for the application to memory device both by simulation and experiments on the condition of full field scanner. The effectiveness of flare compensation for the case of thin absorber mask was also addressed together with related impact on the shadow induced H-V CD bias.

Citation Download Citation

Jeonghoon Lee, Insung Kim, Doohoon Goo, Joo-on Park, Changmin Park, Jinhong Park, Jeongho Yeo, Seongwoon Choi, and Woosung Han "Assessment of full-chip level EUV optical correction for sub-40nm memory device", Proc. SPIE 7271, Alternative Lithographic Technologies, 727142 (18 March 2009); https://doi.org/10.1117/12.813996

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available