You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
18 March 2009Incident angle change caused by different off-axis illumination in extreme ultraviolet lithography
Extreme ultraviolet lithography (EUVL) is believed to be possible patterning technology which can make 22 nm
and below. EUV uses a reflective mask so that the mask is shined with the oblique incident light. Thus, the study of
incident angle effect is very important. Currently, 6 degree oblique incidence is main stream, but 5 degree incident angle
is also studied for 0.25 NA. Incident angles larger than 6 degree are also considered for larger NA. This incident angle
will affect many things, eventually to the line width. Shadow effect also strongly depends on the incident angle. This
shadow effect in the EUVL mask is an important factor that decreases the contrast of the aerial image and causes a
directional problem, thus it will make line width variation. The off-axis illumination (OAI) will be used with
conventional on-axis illumination to make much smaller patterns. This OAI will split the main beam and change the
incident angle. We found that if the incident angle increased with higher degree of coherence, the aerial image went
worse. The CD difference between the horizontal and the vertical pattern is also dependent on the degree of coherence
even though it is small.
The alert did not successfully save. Please try again later.
Eun-Jin Kim, Jee-Hye You, Seong-Sue Kim, Han-Ku Cho, Ilsin An, Hye-Keun Oh, "Incident angle change caused by different off-axis illumination in extreme ultraviolet lithography," Proc. SPIE 7271, Alternative Lithographic Technologies, 727143 (18 March 2009); https://doi.org/10.1117/12.814031