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23 March 2009 Evaluation of a new metrology technique to support the needs of accuracy, precision, speed, and sophistication in near-future lithography
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Abstract
A new metrology technique is being evaluated to address the need for accuracy, precision, speed and sophistication in metrology in near-future lithography. Attention must be paid to these stringent requirements as the current metrology capabilities may not be sufficient to support these near future needs. Sub-nanometer requirements in accuracy and precision along with the demand for increase in sampling triggers the need for such evaluation. This is a continuation of the work published at SPIE Asia conference, 2008. In this technical presentation the authors would like to continue on reporting the newest results from this evaluation of such technology, a new scatterometry based platform under development at ASML, which has the potential to support the future needs. Extensive data collection and tests are ongoing for both CD and overlay. Previous data showed overlay performance on production layers [1] that meet 22 nm node requirements. The new data discussed in this presentation is from further investigation on more process robust overlay targets and smaller target designs. Initial CD evaluation data is also discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chih-Ming Ke, Jimmy Hu, Willie Wang, Jacky Huang, H. L. Chung, C. R. Liang, Victor Shih, H. H. Liu, H. J. Lee, John Lin, Y. D. Fan, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Kiwi Yuan, Vivien Wang, Cathy Wang, Spencer Lin, Mir Shahrjerdy, Andreas Fuchs, and Karel van der Mast "Evaluation of a new metrology technique to support the needs of accuracy, precision, speed, and sophistication in near-future lithography", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72720A (23 March 2009); https://doi.org/10.1117/12.814860
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