Paper
23 March 2009 Manufacturing implementation of scatterometry and other techniques for 300-mm lithography tool controls
T. Wiltshire, D. Corliss, T. Brunner, C. Ausschnitt, R. Young, R. Nielson, E. Hwang, J. Iannucci Jr.
Author Affiliations +
Abstract
Focus and dose control of lithography tools for leading edge semiconductor manufacturing are critical to obtaining acceptable process yields and device performance. The need for these controls is increasing due to the apparent limitation of optical water immersion lithography at NA values of approximately 1.35 and the need to use the same equipment for 45nm, 32nm, and 22nm node production. There is a rich history of lithographic controls using various techniques described in the literature. These techniques include (but are not limited to) Phase Grating Focus Monitoring1 (PGFM), optical CD control using optical overlay metrology equipment (OOCD)2,3, and in more recent years optical scatterometry4,5. Some of the techniques, even though they are technically sound, have not been practical to implement in volume manufacturing as controls for various reasons. This work describes the implementation and performance of two of these techniques (optical scatterometry and OOCD) in a volume 300mm production facility. Data to be reviewed include: - General implementation approach. - Scatterometry dose and focus stability data for 193nm immersion and 248nm dry lithography systems. - Analysis of the stability of optical scatterometry dose and focus deconvolution coefficients over time for 193nm immersion and 248nm dry systems. - Comparison between scatterometry and OOCD techniques for focus monitoring of 248nm dry systems. The presentation will also describe the practical issues with implementing these techniques as well as describe some possible extensions to enhance the current capabilities being described.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Wiltshire, D. Corliss, T. Brunner, C. Ausschnitt, R. Young, R. Nielson, E. Hwang, and J. Iannucci Jr. "Manufacturing implementation of scatterometry and other techniques for 300-mm lithography tool controls", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72720W (23 March 2009); https://doi.org/10.1117/12.812287
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Semiconducting wafers

Scatterometry

Lithography

Control systems

Scanners

Metrology

Deconvolution

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