Paper
23 March 2009 New inspection technology for hole pattern by Fourier space on hp 4x-nm generation
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Abstract
We tried to detect the CD variation of the 4x generation hole pattern using the diffraction light on Fourier space with the polarized light and the modified illumination. The new technology named DD (Dual Diffraction) method has been developed based on the optical simulation and the experimental approaches. We introduce the case of detection for the diameter variation on a multi-layered hole pattern with new method.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akitoshi Kawai, Fuminori Hayano, Kazumasa Endo, Kiminori Yoshino, and Yuichiro Yamazaki "New inspection technology for hole pattern by Fourier space on hp 4x-nm generation", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727219 (23 March 2009); https://doi.org/10.1117/12.814046
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Cited by 1 scholarly publication.
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KEYWORDS
Diffraction

Semiconducting wafers

Critical dimension metrology

Inspection

Optical simulations

Wafer testing

Wafer-level optics

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