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23 March 2009 In-die registration metrology on future-generation reticles
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Today, mask metrology is performed on dedicated registration test patterns in the kerf area between active dies. Accordingly, the measurement performance of the actual registration metrology system on these test patterns is very well characterized. However, it is commonly understood that with the introduction of reticles for the 32nm technology node, the overlay requirements will become more stringent and therefore reticles need to be characterized in greater detail. In order to achieve the tighter overlay performance targets on the wafer, registration metrology on the mask is expected to include "active" structures in the die. There will be more of an emphasis on In-Die metrology if Double Patterning Lithography (DPL) will finally become the technology of choice for the 32nm lithography. Measurement results are obtained on state-of-the-art registration metrology tools on test reticles simulating metrology in the dense active array. These data are analyzed and compared with results achieved on test reticles using standard registration test patterns.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus-Dieter Roeth, Frank Laske, Hiroshi Kinoshita, Daisuke Kenmochi, Karl-Heinrich Schmidt, and Dieter Adam "In-die registration metrology on future-generation reticles", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72722W (23 March 2009);

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