Focus and dose control for high-volume manufacturing of semiconductor

Koichi Sentoku; Takeaki Ebihara; Hideki Ina

doi:10.1117/12.811776

23 March 2009 Focus and dose control for high-volume manufacturing of semiconductor

Koichi Sentoku, Takeaki Ebihara, Hideki Ina

Proceedings Volume 7272, Metrology, Inspection, and Process Control for Microlithography XXIII; 727238 (2009) https://doi.org/10.1117/12.811776
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

We have proposed a new inspection method of in-line focus and dose control for high-volume manufacturing of semiconductor. And we have referred to this method as "Focus and Dose Line Navigator (FDLN)". This method can raise a performance of semiconductor exposure tool and therefore they can go up a yield ratio of semiconductor device. The method leads the exposure condition (focus and dose) to the center of process window. FDLN calculates correct exposure condition using the technology of solving the inverse problem. The sequence involves following process. 1) Creating a focus exposure matrix (FEM) on a test wafer for building some models as supervised data. The models mean the relational equation between the multi measurement results of resist patterns (e.g. Critical dimension (CD), height and sidewall angle) and exposure conditions of FEM. 2) Measuring the resist patterns on production wafers and feeding the measurement data into the library to predict focus and dose. In this time, we have evaluated the accuracy of FDLN. We made some sample wafers by Canon's exposure tool "FPA-7000AS7". And we used Veeco's advanced CD-AFM "InSight" as a topography measurement tool.

Citation Download Citation

Koichi Sentoku, Takeaki Ebihara, and Hideki Ina "Focus and dose control for high-volume manufacturing of semiconductor", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727238 (23 March 2009); https://doi.org/10.1117/12.811776

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