Criteria for success in e-beam resists

A. E. Zweber; T. Komizo; J. Levin; Z. Benes

doi:10.1117/12.816048

1 April 2009 Criteria for success in e-beam resists

A. E. Zweber, T. Komizo, J. Levin, Z. Benes

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72730K (2009) https://doi.org/10.1117/12.816048
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Several issues, including resolution, etch resistance, chromium-resist interface adhesion, and sensitivity with post coat delay, complicate the selection of photoresists for 32nm photomask development from the broad pool of candidates. These issues and others are addressed after an initial screening of critical resist characteristics to reduce the number of contenders. A balanced initial screening of photoresists for 32nm photomasks is presented including global and local critical dimension uniformity, line edge roughness, and resolution of low and high sensitivity positive and negative tone photoresists, relative to exposure duration. The multi-dimensional assessment of candidate resists for photomask applications was summarized with emphasis on the process of selection.

Citation Download Citation

A. E. Zweber, T. Komizo, J. Levin, and Z. Benes "Criteria for success in e-beam resists", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730K (1 April 2009); https://doi.org/10.1117/12.816048

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