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1 April 2009 Comparison of thermal flow and chemical shrink processes for 193 nm contact hole patterning
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Abstract
This paper compares thermal shrink properties of contact holes and chemical shrink performance for 193 nm lithography. Pitch dependence, shrink properties, contact hole circularity, sidewall roughness, and process window are also discussed. Thermal flow process exhibited more pitch dependence than chemical shrink process. Thermal shrink rate increased substantially at higher bake temperatures. Contact holes in defocused area shrunk non-evenly and DOF deteriorated upon heating. In chemical shrink process, shrink rate was hardly influenced by mixing bake temperature, contact holes from center focus to defocus area shrunk evenly preserving effective DOF and MEF became smaller at smaller CD. Chemical shrink has clear advantages over thermal flow process and sub-70 nm contact holes were obtained with iso-dense overlap DOF 0.25 μm by optimizing resist formulations and process conditions. Application of shrink processes will pave the way for the next generation LSI production.
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Takanori Kudo, Charito Antonio, John Sagan, Srinivasan Chakrapani, Deepa Parthasarathy, Sungeun Hong, Muthiah Thiyagarajan, Yi Cao, and Munirathna Padmanaban "Comparison of thermal flow and chemical shrink processes for 193 nm contact hole patterning", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730X (1 April 2009); https://doi.org/10.1117/12.816633
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