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1 April 2009 Organic underlayer materials with exceptionally high thermal stability
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Abstract
Multilayer hardmask (MLHM) schemes have been implemented as an indispensable process for ArF lithography which continues to demand thinner photoresist films. There are many variations of MLHM and semiconductor manufacturers choose to adopt their own designs, depending on their specific needs and technical advances. The quad-layer stack consisting of photoresist, organic ARC, CVD Si hardmask, and spin-on carbon underlayer is one of them. Despite the need for wafer transporting between the spin track and CVD equipment, this scheme is attractive because it can avoid laborious elaboration of sophisticated etching chemistries for spin-on Si-ARC and carbon underlayer. One of the issues arising from the mixed film forming process is the thermal stability of carbon underlayer at high temperatures during the CVD process of the Si hardmask. Organic underlayer which shows high thermal stability is crucial for this mixed hardmask process. These types of thermally stable organic film can also be used for other applications such as the spacer patterning technique for pitch size shrinkage. In this paper, we discuss the development of organic resins with high thermal stability, their physical properties, and their lithographic behaviors in the MLHM schemes.
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Hwan-Sung Cheon, Kyong-Ho Yoon, Min-Soo Kim, Sung Bae Oh, Jee-Yun Song, Nataliya Tokareva, Jong-Seob Kim, and Tuwon Chang "Organic underlayer materials with exceptionally high thermal stability", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727310 (1 April 2009); https://doi.org/10.1117/12.814082
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