Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects

Karen Petrillo; Dave Horak; Susan Fan; Erin McLellan; Matt Colburn; Andrew Metz; Shannon Dunn; Dave Hetzer; Jason Cantone; Kenichi Ueda; Tom Winter; Vaidyanathan Balasubramaniam; Cherry Tang; Mark Slezak

doi:10.1117/12.814260

1 April 2009 Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects

Karen Petrillo, Dave Horak, Susan Fan, Erin McLellan, Matt Colburn, Andrew Metz, Shannon Dunn, Dave Hetzer, Jason Cantone, Kenichi Ueda, Tom Winter, Vaidyanathan Balasubramaniam, Cherry Tang, Mark Slezak

Author Affiliations +

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731A (2009) https://doi.org/10.1117/12.814260
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Spin-on chemical shrink, reactive ion etch [RIE] shrink and litho-etch-litho-etch [LELE] double patterning have been utilized to produce dense 90 nm pitch, 26 nm bottom CD contacts starting from 65 nm CD, 126 nm diagonal pitch as printed features. Demonstrated lithographic process window, post etch pattern fidelity, CD, and CD uniformity are all suitable to production. In addition, electrical test results shows a comparable defect a ratio vs. a no chemical shrink baseline.

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Karen Petrillo, Dave Horak, Susan Fan, Erin McLellan, Matt Colburn, Andrew Metz, Shannon Dunn, Dave Hetzer, Jason Cantone, Kenichi Ueda, Tom Winter, Vaidyanathan Balasubramaniam, Cherry Tang, and Mark Slezak "Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731A (1 April 2009); https://doi.org/10.1117/12.814260

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