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1 April 2009 Contact formation with extremely low proximity effect by double patterning technology
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Contact hole within a NOR FLASH memory array is one of the most challenging features to print in the semiconductor manufacturing. It has been the key limiter of NOR FLASH memory scaling due to the difficulties involved in patterning the one-dimensional contact arrays and extremely stringent contact to gate overlay constraints. In this study, DPT (Double Patterning Technology) by ArF dry process was introduced for patterning NOR FLASH memory contact arrays. This approach has demonstrated a contact patterning with extremely low optical proximity effect for 50nm half-pitch with satisfied lithography process latitude and especially the circular contact shape can be maintained without compromise of NOR FLASH cell area. The novel hard mask scheme was the key enabler for this contact double patterning and this approach can be easily extended to ArF immersion lithography as a promising option for contact formation in leading-edge memory products.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. W. Yeh, S. S. Yu, H. J. Lee, C. H. Huang, Elvis Yang, T. H. Yang, K. C. Chen, and Chih-Yuan Lu "Contact formation with extremely low proximity effect by double patterning technology", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731E (1 April 2009);

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