Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications

Ze-Yu Wu; Joseph Kennedy; Song-Yuan Xie; Ron Katsanes; Kyle Flanigan; Junyan Dai; Nikolaos Bekiaris; Hiram Cervera; Glen Mori; Thomas Wallow

doi:10.1117/12.814416

1 April 2009 Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications

Ze-Yu Wu, Joseph Kennedy, Song-Yuan Xie, Ron Katsanes, Kyle Flanigan, Junyan Dai, Nikolaos Bekiaris, Hiram Cervera, Glen Mori, Thomas Wallow

Author Affiliations +

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731I (2009) https://doi.org/10.1117/12.814416
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

As IC manufactures explore different paths to meet the resolution requirements for next generation technology, patterning schemes which utilize a double photoresist patterning process are under extensive evaluation. One dual patterning process under consideration uses a 172nm UV cure to render the first photoresist pattern insoluble to the casting solvents and developer chemistries used to define the second photoresist pattern. In this work we investigate the change in the material properties such as thickness, optical, bond structure, adhesion and stability of the SiBARC film due to the UV cure. Simulations are included to assess the change in substrate reflectance due to the change in the optical properties of the SiBARC film as a result of the UV cure. Single patterned photoresist line space features versus UV cure dose of the SiBARC - under layer film stack is presented. This is followed by cross-grid and pitch-split double patterning using 172 nm UV light of varying dose to freeze the first photoresist layer patterned using a tri-layer film configuration.

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Ze-Yu Wu, Joseph Kennedy, Song-Yuan Xie, Ron Katsanes, Kyle Flanigan, Junyan Dai, Nikolaos Bekiaris, Hiram Cervera, Glen Mori, and Thomas Wallow "Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731I (1 April 2009); https://doi.org/10.1117/12.814416

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