Development of EUV resists at Selete

Hiroaki Oizumi; Daisuke Kawamura; Koji Kaneyama; Shinji Kobayashi; Toshiro Itani

doi:10.1117/12.812937

1 April 2009 Development of EUV resists at Selete

Hiroaki Oizumi, Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731M (2009) https://doi.org/10.1117/12.812937
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

This paper summarizes the development of EUV resists at Semiconductor Leading Edge Technologies (Selete): the benchmarking results of more than 160 EUV resists from resist manufacturers using the small field exposure tool (SFET) and the selection of the Selete standard resists (SSR) for the SFET. We discuss the current status of EUV resist performance compared to the targets for 32-nm half-pitches (hp) concerning resist sensitivity, ultimate resolution, and line-width-roughness (LWR). In addition we show the screening results of new resin materials.

Citation Download Citation

Hiroaki Oizumi, Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, and Toshiro Itani "Development of EUV resists at Selete", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731M (1 April 2009); https://doi.org/10.1117/12.812937

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