Paper
16 March 2009 Enabling process window improvement at 45nm and 32nm with free-form DOE illumination
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Abstract
We present a method for optimizing a free-form illuminator implemented using a diffractive optical element (DOE). The method, which co-optimizes the source and mask taking entire images of circuit clips into account, improves the common process-window and 2-D image fidelity. We compare process-windows for optimized standard and free-form DOE illuminations for arrays and random placements of contact holes at the 45 nm and 32 nm nodes. Source-mask cooptimization leads to a better-performing source compared to source-only optimization. We quantify the effect of typical DOE manufacturing defects on lithography performance in terms of NILS and common process-window.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tamer H. Coskun, Apo Sezginer, Vishnu Kamat, Michiel Kruger, Bayram Yenikaya, James Carriere, Jared Stack, and Marc Himel "Enabling process window improvement at 45nm and 32nm with free-form DOE illumination", Proc. SPIE 7274, Optical Microlithography XXII, 72740B (16 March 2009); https://doi.org/10.1117/12.814215
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CITATIONS
Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Diffractive optical elements

Photomasks

Manufacturing

Nanoimprint lithography

Source mask optimization

SRAF

Lithographic illumination

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