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16 March 2009 Exploration of linear and non-linear double exposure techniques by simulation
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In this work, a framework for the assessment of different double exposure techniques is laid out. Both the simulation environment and the utilized models, derived from well-established resist models, are discussed. Numerous simulation results are evaluated to investigate strengths and weaknesses of different double exposure approaches. Non-linear superposition techniques are examined in respect of their process performance for both standard and sub 0.25 k1 values. In addition to a study of these effects in the scope of basic layouts, an application to interference-assisted lithography (IAL) is proposed and discussed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John S. Petersen, Robert T. Greenway, Tim Fühner, Peter Evanschitzky, Feng Shao, and Andreas Erdmann "Exploration of linear and non-linear double exposure techniques by simulation", Proc. SPIE 7274, Optical Microlithography XXII, 72741V (16 March 2009);

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