Image-assistant OPC model calibration on 65nm node contact layer

Y. Y. Tsai; S. L. Tsai; Fred Lo; Elvis Yang; T. H. Yang; K. C. Chen; Chih-Yuan Lu

doi:10.1117/12.813461

16 March 2009 Image-assistant OPC model calibration on 65nm node contact layer

Y. Y. Tsai, S. L. Tsai, Fred Lo, Elvis Yang, T. H. Yang, K. C. Chen, Chih-Yuan Lu

Proceedings Volume 7274, Optical Microlithography XXII; 727426 (2009) https://doi.org/10.1117/12.813461
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

This work compared the CD-based and image-assistant approaches for calibrating the OPC models. OPC models were first developed for 65nm-node memory contact layer and calibrated by contact test patterns with various ellipticities. The image-assistant model is a hybrid one calibrated by SEM contours and 1D measurement results, while the CD-based model calibration uses 1D measurement results as the sole data source. The fitting errors, model prediction ability and OPCed results were compared between these two models. Besides, the challenges on calibrating the edge-detection algorithm of the CD SEM images to the extracted contours of OPC tool were also discussed. Finally, the layouts corrected by CD-based and image-assistant models were written on a test mask for wafer-level comparison. The results displayed that the CD-based model showed smaller error on fitting and interpolation, but image-assistant model got improvement on extrapolation prediction of array-edge contact, unknown contact pattern and long contacts. The wafer-level comparison also revealed the image-assistant model outperformed to the CD-based model by smaller correction error on unexpected patterns.

Citation Download Citation

Y. Y. Tsai, S. L. Tsai, Fred Lo, Elvis Yang, T. H. Yang, K. C. Chen, and Chih-Yuan Lu "Image-assistant OPC model calibration on 65nm node contact layer", Proc. SPIE 7274, Optical Microlithography XXII, 727426 (16 March 2009); https://doi.org/10.1117/12.813461

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