Paper
16 March 2009 32nm node device laser-bandwidth OPE sensitivity and process matching
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Abstract
For 32 nm Node Logic Device, we studied the effect of laser bandwidth variation on Optical Proximity Effect (OPE) by investigating through-pitch critical dimension (CD) performance. Our investigation evaluated CD performance with and without the application of Sub-resolution Assist Features (SRAF). These results enabled us to determine the Iso-Dense Bias (IDB), and sensitivity to laser bandwidth, for both SRAF and no-SRAF cases, as well as the impact on Process Window. From the IDB results we present the required laser bandwidth stability in order to maintain OPE variation within CD Budget tolerances. We also introduce OPE matching results between different generation Immersion Lithography exposure tools evaluated for 45nm Node Logic Device.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuyuki Yoshimochi, Takao Tamura, Takaaki Kuribayashi, Takayuki Uchiyama, Nigel Farrar, Toshihiro Oga, and James Bonafede "32nm node device laser-bandwidth OPE sensitivity and process matching", Proc. SPIE 7274, Optical Microlithography XXII, 72742Q (16 March 2009); https://doi.org/10.1117/12.813987
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
SRAF

Logic devices

Critical dimension metrology

Optical simulations

Laser stabilization

Light sources

Combined lens-mirror systems

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