A manufacturing lithographic approach for high density MRAM device using KrF double mask patterning technique

Daniel Liu; Tom Zhong; Terry Torng

doi:10.1117/12.807753

16 March 2009 A manufacturing lithographic approach for high density MRAM device using KrF double mask patterning technique

Daniel Liu, Tom Zhong, Terry Torng

Author Affiliations +

Proceedings Volume 7274, Optical Microlithography XXII; 72743F (2009) https://doi.org/10.1117/12.807753
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

MRAM, a potential candidate of next generation or "universal" memory device, has been in process development and targeted for production. This high density non-volatile memory has a fast <20ns read/write cycle and unlimited endurance. Wordline layer is important for writing. Using KrF tool capability only, this "line & contact hole" wordline pattern must meet the challenge of aggressive pitch size shrinkage and process margin requirements in order to deliver reliable writing efficiency. Thus, appropriate process integration schemes demonstrating single exposure, double exposure and double patterning are compared. A comprehensive study from mask layout simulation and its cost to litho OL/CD process window experimental data analysis will be presented to achieve potential high yield manufacturing goal of the critical wordline design and process integration.

Citation Download Citation

Daniel Liu, Tom Zhong, and Terry Torng "A manufacturing lithographic approach for high density MRAM device using KrF double mask patterning technique", Proc. SPIE 7274, Optical Microlithography XXII, 72743F (16 March 2009); https://doi.org/10.1117/12.807753

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