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18 February 2009 Polycrystalline silicon thin films crystallized by green laser
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Abstract
A top hat beam of frequency-doubled Nd: YAG laser is obtained from our beam shaping optical system. With this beam, amorphous silicon thin films deposited on glass by plasma-enhanced chemical vapor deposition (PECVD) are successfully crystallized. The surface morphology of the laser-crystallized materials is studied by atomic force microscopy (AFM). Pronounced increase in surface roughness after the laser treatment could be observed from the Microscope Photos. Raman spectra of the Si films are measured to confirm the phase transition from amorphous to polycrystalline and to investigate the silicon structural properties. Crystalline fraction evaluated from the Raman spectra are found to increase almost linearly with the laser fluence. There exists the optimized laser fluence to produce the best crystallization in the range of 400 ~1000mJ/cm2.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhijun Yuan, Qihong Lou, Jun Zhou, Xia Liu, Wei Wang, and Zhouping Su "Polycrystalline silicon thin films crystallized by green laser", Proc. SPIE 7276, Photonics and Optoelectronics Meetings (POEM) 2008: Laser Technology and Applications, 727606 (18 February 2009); https://doi.org/10.1117/12.820350
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