Paper
20 May 2009 Material removal rate based on edge effects in ultraprecision polishing process
Wei Yang, YinBiao Guo, Qiao Xu
Author Affiliations +
Proceedings Volume 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 72820A (2009) https://doi.org/10.1117/12.830791
Event: AOMATT 2008 - 4th International Symposium on Advanced Optical Manufacturing, 2008, Chengdu, Chengdu, China
Abstract
Based on the edge effects in the ultra precision polishing process, a revised skin model is used to predict material removal rate (MRR) of circular wafer. With force equation and torque equation, in order to calculate the skin width and the pressure distribution, a revised formula is given. According to Preston's equation, by using Math-Cad software, the material removal rate (MRR) of circular wafer is simulated, and two factors which influence MRR are discussed.One is the distance between the circular wafer center and the polishing tool center; the other is the ratio of the angular velocity of circular wafer to the polishing tool angular velocity.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Yang, YinBiao Guo, and Qiao Xu "Material removal rate based on edge effects in ultraprecision polishing process", Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72820A (20 May 2009); https://doi.org/10.1117/12.830791
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KEYWORDS
Semiconducting wafers

Polishing

Skin

Surface finishing

Chemical mechanical planarization

Mathematical modeling

Abrasives

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