Paper
18 May 2009 Analysis and compensation of shape distortion in UV-LIGA based on partial coherent light theory
Mujun Li, Lianguan Shen, Jinjin Zheng, Wei Zhao
Author Affiliations +
Abstract
How to fabricate high aspect ratio microstructures with high precision has become a very concerned issue. In this paper, the pattern transfer accuracy of proximity lithography is investigated and the related distortion compensation method is presented. According to partial coherent light theory, the propagation of partial coherent light, which is from an extended quasi-monochronmatic source and transferring through the illumination system, is analyzed. And based on the complex degree of coherence for any two points on mask plane, a mathematical model is constructed to analysis the propagation of mutual intensity from mask to photo-resist and the intensity distribution is attained. With the aerial image of mask pattern, the photo-resist profile is simulated. Then the pattern distortion is investigated, especially on the edges and corners of the profile. And a mask optimization method using genetic algorithm is proposed to improve pattern transfer accuracy. Theoretical model indicates an effective way for resist shape distortion analysis and compensation.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mujun Li, Lianguan Shen, Jinjin Zheng, and Wei Zhao "Analysis and compensation of shape distortion in UV-LIGA based on partial coherent light theory", Proc. SPIE 7284, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 728405 (18 May 2009); https://doi.org/10.1117/12.832063
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KEYWORDS
Photomasks

Genetic algorithms

Distortion

Lithography

Photoresist materials

Lithographic illumination

Computer simulations

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