Paper
9 April 2009 Measurement of surface resistivity/conductivity of Si waver by optical interferometry techniques
K. Habib, S. Habib
Author Affiliations +
Abstract
Optical interferometry techniques can be use for the first time to measure the surface resistivity/conductivity of silicon wavers without any physical contact. This can be achieved by applying an electrical potential across the waver and measuring the electronic current flow across the waver as a result of the electrical potential. In the mean time, optical iterferometry techniques such as holographic interferometry can be used in situ to measure the orthogonal surface displacement of the waver, as a result of the applied electrical potential. In addition, a mathematical model can be derived in order to correlate the ratio of the electrical potential to the electronic current flow (electrical potential/electronic Current flow=resistance) and to the surface (orthogonal) displacement of the waver. In other words, a proportionality constant (surface resistivity or conductivity=1/ surface resistivity) between the measured electrical resistance and the surface displacement (by the optical interferometry techniques) can be obtained. Consequently the surface resistivity/ and conductivity of the waver can be determined, without any physical contact.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Habib and S. Habib "Measurement of surface resistivity/conductivity of Si waver by optical interferometry techniques", Proc. SPIE 7294, Nondestructive Characterization for Composite Materials, Aerospace Engineering, Civil Infrastructure, and Homeland Security 2009, 729417 (9 April 2009); https://doi.org/10.1117/12.814869
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KEYWORDS
Silicon

Optical interferometry

Resistance

Oxides

Holographic interferometry

Aluminum

Mathematical modeling

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