Thin nickel oxide films for micro-bolometers

Dong Soo Kim; Il Woong Kwon; Yong Soo Lee; Hee Chul Lee

doi:10.1117/12.820153

6 May 2009 Thin nickel oxide films for micro-bolometers

Dong Soo Kim, Il Woong Kwon, Yong Soo Lee, Hee Chul Lee

Proceedings Volume 7298, Infrared Technology and Applications XXXV; 72980O (2009) https://doi.org/10.1117/12.820153
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

This study represents an investigation of the feasibility of thin nickel oxide film (~100nm in thickness) as a microbolometer material. Thin nickel oxide film was obtained by a heat treatment (below 400 °C) of DC-sputtered Ni film on a SiO2/Si substrate in an O2 environment. Using a parameter analyzer (4156A) with a TEC temperature controller, a spectrum analyzer and a low noise amplifier, a systemic analysis of the electrical and noise characteristics of nickel oxide film is performed. A negative temperature coefficient of resistance (TCR) value of 3.28%/oC and a feasible 1/f noise result ranging from 1Hz to 100Hz were acquired. The characteristics of the thin nickel oxide film obtained in this study are comparable to those of a-Si. Moreover, the nickel oxide thin film retained a stable state at room temperature. Thus, the thin nickel oxide, which is CMOS-compatible and yields high TCR values and proper 1/f noise characteristics through a simple fabrication process, is shown to be a promising micro-bolometric material.

Citation Download Citation

Dong Soo Kim, Il Woong Kwon, Yong Soo Lee, and Hee Chul Lee "Thin nickel oxide films for micro-bolometers", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72980O (6 May 2009); https://doi.org/10.1117/12.820153

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