Translator Disclaimer
6 May 2009 Thin nickel oxide films for micro-bolometers
Author Affiliations +
This study represents an investigation of the feasibility of thin nickel oxide film (~100nm in thickness) as a microbolometer material. Thin nickel oxide film was obtained by a heat treatment (below 400 °C) of DC-sputtered Ni film on a SiO2/Si substrate in an O2 environment. Using a parameter analyzer (4156A) with a TEC temperature controller, a spectrum analyzer and a low noise amplifier, a systemic analysis of the electrical and noise characteristics of nickel oxide film is performed. A negative temperature coefficient of resistance (TCR) value of 3.28%/oC and a feasible 1/f noise result ranging from 1Hz to 100Hz were acquired. The characteristics of the thin nickel oxide film obtained in this study are comparable to those of a-Si. Moreover, the nickel oxide thin film retained a stable state at room temperature. Thus, the thin nickel oxide, which is CMOS-compatible and yields high TCR values and proper 1/f noise characteristics through a simple fabrication process, is shown to be a promising micro-bolometric material.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Soo Kim, Il Woong Kwon, Yong Soo Lee, and Hee Chul Lee "Thin nickel oxide films for micro-bolometers", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72980O (6 May 2009);

Back to Top