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7 May 2009 Low-light-level CMOS image sensor for digitally fused night vision systems
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In this paper we present a VNIR solid state sensor technology suitable for next generation fused night vision systems. This technology is based on a highly optimized low power 0.18um CMOS image sensor (CIS) process. We describe a 320(H) x 240(V) pixel prototype sensor based on this technology. The sensor features 5T pixels with pinned photodiodes on a 6.5μm pitch with integrated micro-lens. The 5T pixel architecture enables both correlated double sampling (CDS) and a lateral anti-blooming drain. The measured peak quantum efficiency of the sensor is greater than 50% at 600nm, and the read noise is less than 1e- RMS at room temperature. The sensor does not have any multiplicative noise. The full well capacity is greater than 40ke-, the dark current is less than 3.8pA/cm2 at 20ºC, and the MTF at 77 lp/mm is 0.4 at 600nm. The sensor also achieves an intra-scene linear dynamic range of greater than 90dB (30000:1) at room temperature.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boyd Fowler, Chiao Liu, Steve Mims, Janusz Balicki, Wang Li, Hung Do, and Paul Vu "Low-light-level CMOS image sensor for digitally fused night vision systems", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981D (7 May 2009);

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