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6 May 2009 Long wavelength InAs/GaSb superlattice detectors based on nBn and pin design
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Abstract
The development of type-II InAs/GaSb superlattice (SL) detectors with nBn and pin designs for the long wave infrared (LWIR) spectral region are discussed. First, SL growth optimization for LWIR region is explained, then the structures based on LWIR nBn and pin are presented. Comparison of optical characterization for the identical SL structures based on the nBn and pin designs is reported. Dark current density of 0.001 A/cm2 at 100 mV for nBn as compared to 0.2 A/cm2 for pin devices shows a reduction of dark current density using the nBn design. At 77 K, the peak responsivity and detectivity are measured to be 5.86 A/W and 3.08 × 1010 Jones for the nBn and 1.49 A/W and 4.2 × 109 Jones for the pin based design, respectively.
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A. Khoshakhlagh, H. S. Kim, S. Myers, N. Gautam, S. J. Lee, E. Plis, S. K. Noh, L. R. Dawson, and S. Krishna "Long wavelength InAs/GaSb superlattice detectors based on nBn and pin design", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72981P (6 May 2009); https://doi.org/10.1117/12.818419
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