Status of p-on-n HgCdTe technologies at DEFIR

N. Baier; L. Mollard; J. Rothman; G. Destéfanis; P. Ballet; G. Bourgeois; J. P. Zanatta; M. Tchagaspanian; S. Courtas; P. Fougères; C. Pautet; P. Pidancier; L. Rubaldo

doi:10.1117/12.820343

6 May 2009 Status of p-on-n HgCdTe technologies at DEFIR

N. Baier, L. Mollard, J. Rothman, G. Destéfanis, P. Ballet, G. Bourgeois, J. P. Zanatta, M. Tchagaspanian, S. Courtas, P. Fougères, C. Pautet, P. Pidancier, L. Rubaldo

Author Affiliations +

Proceedings Volume 7298, Infrared Technology and Applications XXXV; 729823 (2009) https://doi.org/10.1117/12.820343
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

This paper presents recent development made at CEA-LETI on manufacturing and characterization of planar p-on-n HgCdTe photodiodes on long-, mid- and short-wavelength. HgCdTe (MCT) layer was grown both by liquid-phase epitaxy (LPE) and by molecular beam epitaxy (MBE) on lattice matched CdZnTe (CZT). The n-type MCT base layer was obtained by indium doping. Planar p-on-n photodiodes were manufactured by arsenic doping, which has been activated by post-implanted annealing in Hg overpressure. As incorporation is achieved either by implantation or by incorporation (during MBE growth). Electro-optical characterizations on these p-on-n photodiodes were made on FPAs. Results show excellent operabilities (99.95% with ±0.5×mean value criterion) in responsivity and NETD and background limited photodetectors. For long-wavelength FPAs, dark current is very low, leading to a R0A product comparable to the state of the art at cut-off wavelength of λc = 9.2 μm. MBE mid-wavelength FPAs present very low responsivity dispersion, reaching 1.1%. Comparisons are made between implantation and growth incorporation As doping technologies.

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N. Baier, L. Mollard, J. Rothman, G. Destéfanis, P. Ballet, G. Bourgeois, J. P. Zanatta, M. Tchagaspanian, S. Courtas, P. Fougères, C. Pautet, P. Pidancier, and L. Rubaldo "Status of p-on-n HgCdTe technologies at DEFIR", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 729823 (6 May 2009); https://doi.org/10.1117/12.820343

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