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6 May 2009 Development history of HgCdTe infrared detectors in Japan
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Abstract
The authors summarize the past 40-years history on the development of HgCdTe infrared detectors in Japan. At the early stage of development of material growth, high-quality HgCdTe layers were obtained by liquid phase epitaxy technique, owing to lattice-matched CdZnTe substrates. Hetero-epitaxial growth techniques of HgCdTe were also successfully developed to obtain epilayers on much larger and cheaper substrates such as GaAs and Si, using methods of metal-organic chemical vapor deposition and molecular beam epitaxy, where key issues were controlling surface orientation, surface polarity and so forth. Fabrication process of p-on-n junction photodiodes was developed with various improvements on ion implantation and surface passivation. On the basis of technologies mentioned above, large-scale infrared focal plane arrays were realized with superior thermal images.
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Hironori Nishino and Naoki Oda "Development history of HgCdTe infrared detectors in Japan", Proc. SPIE 7298, Infrared Technology and Applications XXXV, 72982X (6 May 2009); https://doi.org/10.1117/12.817404
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