Effects of indium mole fraction on LWIR light-emitting device performance

Naresh C. Das; Fred Towner; Ri. P. Leavitt

doi:10.1117/12.819412

22 April 2009 Effects of indium mole fraction on LWIR light-emitting device performance

Naresh C. Das, Fred Towner, Ri. P. Leavitt

Proceedings Volume 7301, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XIV; 73010I (2009) https://doi.org/10.1117/12.819412
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

Electroluminescence in the range of 7-9 μm is observed from an Sb-based type II interband quantum cascade structure. The LED structure has 30 active/injection periods. We have studied both top emitting and flip-chip mount bottom emitting LED devices. For room temperature operation, an increase, saturation and decrease in light output occur at successively higher injection currents. An increase of about ten times in light output occurs when device is operated at 77 K compared to room temperature operation. This increase is attributed to reduced Auger non-radiative recombination at lower temperatures. We varied indium mole fraction between 18-30% in the device active regions. An increase in light output is observed for lower indium mole fraction. These devices can be used for high temperature simulation in an infrared scene generation experiment.

Citation Download Citation

Naresh C. Das, Fred Towner, and Ri. P. Leavitt "Effects of indium mole fraction on LWIR light-emitting device performance", Proc. SPIE 7301, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XIV, 73010I (22 April 2009); https://doi.org/10.1117/12.819412

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