Tunable THz plasmon resonances in InGaAs/InP HEMT

R. E. Peale; H. Saxena; W. R. Buchwald; G. C. Dyer; S. J. Allen Jr.

doi:10.1117/12.818520

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30 April 2009 Tunable THz plasmon resonances in InGaAs/InP HEMT

R. E. Peale, H. Saxena, W. R. Buchwald, G. C. Dyer, S. J. Allen Jr.

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Proceedings Volume 7311, Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense; 73110I (2009) https://doi.org/10.1117/12.818520
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

Voltage-tunable plasmon resonances in a InGaAs/InP high electron mobility transistor (HEMT) are reported. The gate contact consisted of a 0.5 micron period metal grating formed by electron-beam lithography. Narrow-band resonant absorption of THz radiation was observed in transmission in the range 10 - 50 cm^-1. The resonance frequency red-shifts with increasing negative gate bias as expected. Photo-response to a tunable far-IR laser is reported. The device may have application in high-frame-rate THz array detectors for spectral imaging with real-time chemical analysis.

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R. E. Peale, H. Saxena, W. R. Buchwald, G. C. Dyer, and S. J. Allen Jr. "Tunable THz plasmon resonances in InGaAs/InP HEMT", Proc. SPIE 7311, Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense, 73110I (30 April 2009); https://doi.org/10.1117/12.818520

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