Fundamentals and application of materials integration for low-power piezoelectrically actuated ultra-nanocrystalline diamond MEMS/NEMS

O. Auciello; S. Srinivasan; J. Hiller; A. V. Sumant; B. Kabius

doi:10.1117/12.822798

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11 May 2009 Fundamentals and application of materials integration for low-power piezoelectrically actuated ultra-nanocrystalline diamond MEMS/NEMS

O. Auciello, S. Srinivasan, J. Hiller, A. V. Sumant, B. Kabius

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Proceedings Volume 7318, Micro- and Nanotechnology Sensors, Systems, and Applications; 73181B (2009) https://doi.org/10.1117/12.822798
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

Most current micro/nanoelectromechanical systems (MEMS/NEMS) are based on silicon. However, silicon exhibits relatively poor mechanical/tribological properties, compromising applications to several projected MEMS/NEMS devices, particularly those that require materials with high Young's modulus for MEMS resonators or low surface adhesion forces for MEMS/NEMS working in conditions with extensive surface contact. Diamond films with superior mechanical/tribological properties provide an excellent alternative platform material. Ultrananocrystalline diamond (UNCD®) in film form with 2-5 nm grains exhibits excellent properties for high-performance MEMS/NEMS devices. Concurrently, piezoelectric Pb(Zr_xTi_1-x)O₃ (PZT) films provide high sensitivity/low electrical noise for sensing/high-force actuation at relatively low voltages. Therefore, integration of PZT and UNCD films provides a high-performance platform for advanced MEMS/NEMS devices. This paper describes the bases of such integration and demonstration of low voltage piezoactuated hybrid PZT/UNCD cantilevers.

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O. Auciello, S. Srinivasan, J. Hiller, A. V. Sumant, and B. Kabius "Fundamentals and application of materials integration for low-power piezoelectrically actuated ultra-nanocrystalline diamond MEMS/NEMS", Proc. SPIE 7318, Micro- and Nanotechnology Sensors, Systems, and Applications, 73181B (11 May 2009); https://doi.org/10.1117/12.822798

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