High single photon detection efficiency 4H-SiC avalanche photodiodes

Xiaogang Bai; Dion McIntosh; Han-Din Liu; Joe C. Campbell

doi:10.1117/12.818122

29 April 2009 High single photon detection efficiency 4H-SiC avalanche photodiodes

Xiaogang Bai, Dion McIntosh, Han-Din Liu, Joe C. Campbell

Proceedings Volume 7320, Advanced Photon Counting Techniques III; 73200I (2009) https://doi.org/10.1117/12.818122
Event: SPIE Defense, Security, and Sensing, 2009, Orlando, Florida, United States

Abstract

Detection of low-level ultraviolet (UV) light has been the focus of numerous research and development efforts in recent years. To date, the most promising solid-state solution is SiC avalanche photodiodes. We report 4H-SiC avalanche photodiodes with low dark current and high gain. Geiger mode operation with high single photon detection efficiency and low dark count probability has been achieved. The dark current behavior of a 4x4 array of SiC APDs is also presented.

Citation Download Citation

Xiaogang Bai, Dion McIntosh, Han-Din Liu, and Joe C. Campbell "High single photon detection efficiency 4H-SiC avalanche photodiodes", Proc. SPIE 7320, Advanced Photon Counting Techniques III, 73200I (29 April 2009); https://doi.org/10.1117/12.818122

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